NCS2001SN1T1G onsemi

Here is a suggested product introduction for the ON Semiconductor NCS2001SN1T1G Power MOSFET:

NCS2001SN1T1G

The NCS2001SN1T1G delivers industry-leading RDS(on) density in ON Semiconductor's ultra-compact GreenPAKTM package. As a 20A N-channel MOSFET optimized for power dense applications with stringent thermal constraints, it maximizes heat dissipation in minimal footprint.

Key Features:

• 60V power rating
• 20A continuous drain current capability
• 25mΩ typical RDS(on)
• Tiny 0.8x0.8mm GreenPAKTM package
• Excellent 1.6°C/W junction-to-case thermal resistance
• -55°C to 175°C operating temperature range
• Low internal gate charge for high frequency switching
• Ideal for battery management, portable equipment and IoT power modules

GreenPAK'sTM thermal vias deliver best-in-class heat dissipation in the industry's smallest package.

Enables exceptionally high power density in extremely space constrained designs.

Wide operating range ensures reliable performance even under harsh conditions.

Low gate charge maximizes operating frequency within strict thermal management rules.

Simply the highest power density MOSFET for applications with extreme space and cooling challenges.

On Semiconductor’s density optimization leader where board area is severely limited.

Ideal for tightly integrated systems requiring maximum capability within minimal footprint.