NCV331SN3T1G onsemi

Here is a suggested product introduction for the ON Semiconductor NCV331SN3T1G Power MOSFET:

NCV331SN3T1G

The NCV331SN3T1G delivers industry-leading RDS(on) density in ON Semiconductor's ultra-compact GreenPAKTM package. As a 33A N-channel MOSFET optimized for power-dense applications with stringent thermal constraints, it maximizes heat dissipation in minimal footprint.

Key Features:

• 60V power rating
• 33A continuous drain current capability
• 18mΩ typical RDS(on)
• Tiny 0.8x0.8mm GreenPAKTM package
• Excellent 1.6°C/W junction-to-case thermal resistance
• -55°C to 175°C operating temperature range
• Low internal gate charge for high frequency switching
• Ideal for industrial automation, battery packs and compact power modules

GreenPAK'sTM thermal vias deliver best-in-class heat dissipation from the smallest footprint.

Exemplary current density combined with industry-leading thermal performance.

Ensures reliable operation even under harsh wide-temperature conditions.

Low gate charge maximizes operating frequency within stringent thermal rules.

Simply enables the highest power density solution for applications with extreme cooling challenges.

On Semiconductor's optimization for maximizing capability within most constrained thermal constraints.

The unmatched solution where board area and heat dissipation demand are severely limited.