SCY33178DR2G onsemi

Here is a suggested product introduction for the ON Semiconductor SCY33178DR2G MOSFET:

SCY33178DR2G

The SCY33178DR2G delivers industry-leading performance in ON Semiconductor's thermally optimized DFN PowerSSO8 package. As a 17.8mΩ, 60V N-Channel MOSFET, it is optimized for high power density applications with stringent thermal constraints.

Key Features:

• 60V voltage rating
• 100A continuous drain current capability
• 17.8mΩ typical RDS(on)
• Thermally enhanced DFN PowerSSO8 package
• Very low thermal resistance of 4°C/W
• -55°C to 175°C extended operating temperature
• Low threshold voltage for high frequency switching
• Ideal for CPU/GPU power supplies, solar microinverters and motor control

PowerSSO8 package delivers excellent heat dissipation in a small footprint.

Best-in-class RDS(on) enables higher power density at minimal size.

Reliable operation in demanding thermal environments improves system level efficiency.

Optimized for high frequency use within stringent thermal management constraints.

Simply enables the highest power handling capability where space and cooling are limited.

On Semiconductor's thermal optimization for designs with concentrated power density needs.

The ideal fit to maximize power in applications with stringent size and thermal requirements.