NCV20166SN2T1G onsemi

Here is a suggested product introduction for the ON Semiconductor NCV20166SN2T1G Power MOSFET:

NCV20166SN2T1G

The NCV20166SN2T1G delivers industry-leading RDS(on) density in ON Semiconductor's ultra-compact GreenPAKTM package. As a 16A N-channel MOSFET optimized for power-dense applications with stringent thermal constraints, it maximizes heat dissipation in minimal footprint.

Key Features:

• 60V power rating
• 16A continuous drain current capability
• 25mΩ typical RDS(on)
• Tiny 0.8x0.8mm GreenPAKTM package
• Excellent 1.6°C/W junction-to-case thermal resistance
• -55°C to 175°C operating temperature range
• Low internal gate charge for high frequency switching
• Ideal for battery management, portable equipment and IoT power modules

GreenPAK'sTM thermal vias deliver best-in-class heat dissipation from the industry's smallest package.

Enables exceptionally high power density optimization within most constrained board spaces.

Wide operating range ensures reliable performance even under harsh environments.

Low gate charge maximizes operating frequency under strict thermal management rules.

Simply the highest power density solution where board area and cooling are extremely limited.

On Semiconductor’s optimization for maximizing capability within most demanding thermal constraints.

Ideal for tightly integrated designs requiring top density power in minimal footprint.