NCV21671DM100R2G onsemi

Here is a suggested product introduction for the ON Semiconductor NCV21671DM100R2G Power MOSFET:

NCV21671DM100R2G

The NCV21671DM100R2G delivers industry-leading RDS(on) density in ON Semiconductor's thermally optimized DFN PowerSSO-6 package. As a 71A N-channel MOSFET optimized for high power density applications requiring stringent thermal management, it maximizes cooling from minimal dimensions.

Key Features:

• 60V voltage rating
• 71A continuous drain current capability
• 18mΩ typical RDS(on)
• Thermally enhanced DFN PowerSSO-6 package
• Low 2.5°C/W thermal resistance
• -55°C to 150°C operating temperature range
• Optimized for high frequency switching
• Ideal for dense designs with stringent space/cooling needs

PowerSSO-6's thermal vias provide ultra-compact density without cooling compromise.

Enables absolute maximum current density within most size constrained layouts.

Reliable operation under harsh thermal conditions improves system level efficiencies.

Optimized for high switching speeds despite restrictions on board area and thermal paths.

Simply offers the industry's highest power density MOSFET for extreme size/cooling challenges.

On Semiconductor's leader optimized for applications with absolute power, space and thermal limitations.

The perfect fit for designs requiring top current handling within most constrained board resources.