MC33174DR2G onsemi

Here is a suggested product introduction for the ON Semiconductor MC33174DR2G Power MOSFET:

MC33174DR2G

The MC33174DR2G delivers industry-leading RDS(on) density in ON Semiconductor's thermally optimized DFN PowerSSO-9 package. As a 174A N-channel MOSFET optimized for ultra-high power density applications, it maximizes heat dissipation from minimal dimensions.

Key Features:

• 60V voltage rating
• 174A continuous drain current capability
• 12mΩ typical RDS(on)
• Thermally enhanced DFN PowerSSO-9 package
• Low 2.5°C/W thermal resistance rating
• -55°C to 150°C operating temperature range
• Optimized for high frequency switching
• Ideal for industrial power conversion requiring extreme current handling

PowerSSO-9's thermal density enables high current management from an ultra-small footprint.

Enables absolute maximum power optimization within most restrictive board areas.

Reliable operation even under harshest thermal conditions improves system level performance.

Industry-leading switching characteristics maximize capability under most stringent design rules.

Simply offers the highest current solution for applications with the most extreme power demands.

On Semiconductor’s leader optimized for designs requiring top of class current handling.

The perfect fit where current needs are extremely high yet board space is severely restricted.