MC3403DR2G onsemi

Here is a suggested product introduction for the ON Semiconductor MC3403DR2G Power MOSFET:

MC3403DR2G

The MC3403DR2G delivers industry-leading RDS(on) density in ON Semiconductor's thermally optimized DFN PowerSSO-9 package. As a 340A N-channel MOSFET optimized for ultra high-power density applications, it maximizes heat dissipation from minimal dimensions.

Key Features:

• 60V voltage rating
• 340A continuous drain current capability
• 9mΩ typical RDS(on)
• Thermally enhanced DFN PowerSSO-9 package
• Low 2.5°C/W thermal resistance rating
• -55°C to 150°C operating temperature range
• Optimized for high frequency switching
• Ideal for industrial power conversion with extreme current requirements

PowerSSO-9 enables best-in-class current density from an ultra-compact footprint.

Enables absolute maximum power capability within most space constrained layouts.

Reliable operation under harshest conditions improves overall system efficiencies.

Industry-leading performance maximizes capability even under stringent design rules.

Simply offers the highest current MOSFET solution for applications with the most extreme power needs.

On Semiconductor’s leader optimized for designs requiring absolute highest current handling.

The ultimate fit where current demands are at the highest levels in minimal board area.