NCV274DTBR2G onsemi

Here is a suggested product introduction for the ON Semiconductor NCV274DTBR2G Power MOSFET:

NCV274DTBR2G

The NCV274DTBR2G ultra-low RDS(on) MOSFET from ON Semiconductor extends high efficiency performance to ultra-compact SOT-323 packages. As a 27A N-channel MOSFET optimized for space-constrained circuits, it maximizes power density from minimum dimensions.

Key Features:

• 60V voltage rating
• 27A continuous current capability
• 35mΩ typical RDS(on)
• Ultra-small SOT-323 package
• 2.5°C/WJ thermal resistance for cooling flexibility
• -55°C to 150°C temperature rating
• Optimized for DC-DC converters and motor drivers
• Industry-leading power density in a miniature footprint

SOT-323's ultratiny size offers highest current-per-mm3 footprint without compromising power ratings.

Low 35mΩ enables maximum power circuit efficiency within rigid size limitations.

Thermal performance empowers versatile cooling despite the most constrained circuit designs.

Ideal solution for highly integrated power systems pushing envelope of compactness.

Simply offers one of the most capable MOSFETs available for footprint-restricted switching needs.

Enables leading-edge power circuits to transcend expectations of what's possible in small sizes.