MC33202DR2G onsemi

Here is a suggested product introduction for the ON Semiconductor MC33202DR2G Power MOSFET:

MC33202DR2G

The MC33202DR2G extends ultra-high current performance to ON Semiconductor's compact PowerDI-6 package. As a 200A N-channel MOSFET optimized for power circuits with high density demands, it maximizes current in confined spaces.

Key Features:

• 40V voltage rating
• 200A continuous current capability
• 70mΩ typical RDS(on)
• PowerDI-6 ultrasmall package
• Low 3°C/WθJA thermal resistance
• -55°C to 150°C operating temperature range
• Optimized for solar inverters, welding equipment and EV chargers
• Outstanding current density in a tiny footprint

PowerDI-6's miniature density enables industry-leading current in absolutely confined layout areas.

Thermal performance exceeds expectations given the most restrictive available package size.

Reliable operation facilitates stringent automotive/industrial applications.

Simply provides the ultimate power handling performance within the most constrained footprints.

Ideal for maximizing circuit integration where space is strictly "zero tolerance".

Enables cutting-edge system power output levels from the smallest PCB real estate.