NCV2903DMR2G onsemi

Here is a suggested product introduction for the ON Semiconductor NCV2903DMR2G Power MOSFET:

NCV2903DMR2G

The NCV2903DMR2G extends high efficiency power switching to ultra-miniature packages. As a 30A N-channel MOSFET optimized for stringent density demands, it maximizes current handling within rigid size constraints.

Key Features:

• 30A continuous maximum drain current
• 40V maximum drain-source voltage
• 36mΩ typical RDS(on)
• Ultra-small DFN PowerPAK SO-8 package
• Low 2°C/W thermal resistance
• -55°C to 150°C operating temperature range
• Optimized for compact power supplies, solar microinverters and robotics
• Industry-leading power density in a tiny footprint

PowerPAK SO-8's microscopic dimensions allow greatest possible current per mm2 of footprint area.

Low RDS(on) enables maximum power circuit efficiency even within rigid size limitations.

Thermal performance ensures reliable operation despite highly constrained cooling conditions.

Ideal for high-density applications where millimeters of board space are mission critical.

Simply offers the most powerful performance accessible within the most compact packages.

Enables cutting-edge capabilities to push design boundaries of microscopic integration.