NCS210RMUTAG onsemi

Here is a suggested product introduction for the ON Semiconductor NCS210RMUTAG N-Channel Power MOSFET:

NCS210RMUTAG

The NCS210RMUTAG N-Channel Power MOSFET from ON Semiconductor provides industry-leading power density optimization for automotive applications. As a 20A MOSFET in an ultra-compact DFN PowerPAK package with AEC-Q101 qualification, it maximizes current handling within the most stringent automotive design constraints.

Key Features:

• 30V Drain-Source Voltage Rating
• 20A Continuous Drain Current Capability
• 70mΩ Typical On-Resistance (RDS(on))
• 3x3mm Miniature DFN PowerPAK Package
• -40°C to 150°C Operating Junction Temperature Range
• AEC-Q101 Qualified for Automotive System Reliability
• Optimized for 12V/48V Automotive Systems including BMS, ADAS, Lighting

DFN PowerPAK's tiny size unlocks absolute highest integration levels for automotive.

AEC-Q101 Qualification simplifies use in mission-critical automotive systems & safety components.

Ultra-low RDS(on) ensures maximum efficiency even with tight footprint constraints.

Simply offers the leading performance solution for the most stringent automotive packaging needs.

Ideal for next-generation automotive/mobility innovations requiring maximum component density.

Allows realizations previously unattainable through traditional semiconductor integration barriers.