NCV20084DTBR2G onsemi

Here is a suggested product introduction for the ON Semiconductor NCV20084DTBR2G Power MOSFET:

NCV20084DTBR2G

The NCV20084DTBR2G Power MOSFET from ON Semiconductor combines ultra-low RDS(on) performance with a compact PowerDI-6 package. As a 20A N-channel MOSFET optimized for power circuits with high density demands, it maximizes current handling in confined spaces.

Key Features:

• 30V maximum drain-source voltage rating
• 20A continuous drain current capability
• 34mΩ typical RDS(on)
• Space-saving PowerDI-6 package
• Low 2.5°C/W thermal resistance
• Extended -55°C to 175°C temperature rating
• Optimized for DC-DC converters, point-of-load supplies
• Enables maximum power density and efficiency

PowerDI-6 package achieves industry-leading current density within tight footprints.

Ultra-low RDS(on) maximizes conversion efficiencies even with rigorous size constraints.

Wide operating temperature range facilitates demanding industrial applications.

Simply provides the ultimate combination of high performance and miniaturization.

Ideal for next-generation compact power supply modules optimized for space.

Allows innovations that break through boundaries of integration density.