NCV20092DR2G onsemi

Here is a suggested product introduction for the ON Semiconductor NCV20092DR2G Power MOSFET:

NCV20092DR2G

The NCV20092DR2G Power MOSFET from ON Semiconductor delivers leading-edge efficiency in an ultra-compact SOT-523. As a 19A N-channel MOSFET optimized for stringent density demands, it maximizes current handling within rigid size constraints.

Key Features:

• 30V voltage rating
• 19A continuous current capability
• 40mΩ typical RDS(on)
• Industry's smallest SOT-523 package
• Low 3.2°C/WθJA thermal resistance
• -55°C to 150°C wide temperature range
• Optimized for motor control, DC-DC conversion and solar microinverters
• Highest power density in the most footprint-constrained layouts

At 1.2x1.5mm, SOT-523 is simply the smallest package while retaining full functionality.

Ultra-low RDS(on) ensures maximum efficiency despite rigid size limitations.

Thermal performance guaranteed despite restrictive design conditions.

The ideal solution for any application where space is ultra-critical.

Simply provides the ultimate in power MOSFET density optimization.

Enables innovations previously impossible due to footprint constraints.