NCV20081SN3T1G onsemi

Here is a suggested product introduction for the ON Semiconductor NCV20081SN3T1G Power MOSFET:

NCV20081SN3T1G

The NCV20081SN3T1G Power MOSFET from ON Semiconductor delivers industry-leading efficiency in an microscopic SON package. As an 8A N-channel MOSFET optimized for ultra-dense motor control designs, it maximizes current in the most stringent size constraints.

Key Features:

• 30V voltage rating
• 8A continuous current capability
• 73mΩ typical RDS(on)
• Minuscule 1.5x2mm SON package
• Thermal resistance as low as 5.3°C/W
• -40°C to 150°C extended temperature range
• Optimized for integrated motor control designs
• Highest possible power density in the tightest footprints

At just 1.5x2mm, SON is the ultimate in package miniaturization.

Proven thermal performance ensures reliability even in tightly packed circuits.

Low RDS(on) maximizes efficiency despite rigid layout area limitations.

Simply enables the highest possible integration levels for motor control.

Ideal solution for any application needing absolute maximal density optimization.

Unlocks potential of leading-edge motor control innovations.