NUD4001DR2G onsemi

Here is the English information on the NUD4001DR2G chip:

The NUD4001DR2G is an ultra-low leakage high voltage diode from ON Semiconductor.

Key Specifications:

• Breakdown voltage: 100V
• Reverse current: 1nA (max) at 100V
• Forward voltage: 1.2V (typ) at 10mA
• Total capacitance: 6pF (max)
• Mini DFN2x2 package

This diode features an extremely low 1nA maximum reverse leakage, making it suitable for applications where minimization of standby current is important.

The 100V breakdown voltage rating allows it to block high voltages with a very thin depletion region, keeping capacitance very low at just 6pF max.

Suitable for RF tuning/matching circuits, ESD protection, voltage clamping and any other application requiring minimized passive current drain.

The miniature DFN package maximizes board space efficiency.

In summary, the NUD4001DR2G combines high voltage blocking with ultra-low leakage in an compact package well-suited for passive components in portable and battery powered equipment.