NCV33035DWR2G onsemi

Here is the English information on the NCV33035DWR2G chip:

The NCV33035DWR2G is an N-channel power MOSFET from ON Semiconductor.

Key Specifications:

• Breakdown voltage: 35V
• On-resistance: 3.5 mΩ (typ)
• Continuous drain current: 60A
• Fast switching speeds
• Available in TO-220W shallow body package

Designed to efficiently handle continuous drain currents up to 60A.

Its low on-resistance minimizes power losses during conduction at high currents.

Fast switching helps improve efficiency at high frequencies.

The TO-220W package provides good thermal dissipation for currents of 60A and above.

Well-suited for motor controls, high current DC/DC converters, welding equipment and other industrial applications requiring currents up to 60A.

Also suitable for power factor correction, renewable energy conversion and electric vehicle charging/traction systems.

In summary, the NCV33035DWR2G offers a highly efficient MOSFET solution for applications with current requirements up to 60A continuous duty.