MC33039DR2G onsemi

Here is the English information on the MC33039DR2G chip:

The MC33039DR2G is a N-channel power MOSFET from ON Semiconductor.

Key Specifications:

• Breakdown voltage: 40V
• On-resistance: 3.9 mΩ (typ)
• Continuous drain current: 60A
• Fast switching speeds
• TO-220AB package

Designed to efficiently handle continuous currents up to 60A.

Its low on-resistance reduces power losses during high current conduction.

Fast switching speeds further increase efficiency at high frequencies.

The TO-220AB package provides excellent heat dissipation for currents over 60A.

Suitable for motor controls, high current switching supplies, battery chargers and other industrial equipment requiring up to 60A.

Also suitable for automotive systems including traction control, DC/DC conversion and battery management.

In summary, the MC33039DR2G offers a high power MOSFET solution optimized for applications with current demands up to 60A continuous duty.