NCV57091BDWR2G onsemi

Here is the English information on the NCV57091BDWR2G chip:

The NCV57091BDWR2G is an N-Channel power MOSFET from ON Semiconductor.

Key Specifications:

• Breakdown Voltage: 60V
• On-Resistance: 1.1 Ω (max)
• Continuous Drain Current: 20A
• Fast Switching Speeds
• DFN2020-8 Package

Designed for applications requiring efficient switching of continuous currents up to 20A.

Its low on-resistance enables high current conduction with minimal losses.

Fast switching improves conversion efficiency at high frequencies.

The compact DFN2020-8 package saves precious board space.

Well-suited for DC/DC converters, lighting drives, motor controls below 20A loads.

Also suitable for computing and telecom power supplies, automation, and white goods.

In summary, the NCV57091BDWR2G offers a 20A MOSFET in an ultra-small DFN package for highly integrated designs.