NCV3011DTBR2G onsemi

Here is the English information on the NCV3011DTBR2G chip:

The NCV3011DTBR2G is an N-channel power MOSFET from ON Semiconductor.

Key Specifications:

• Breakdown Voltage: 30V
• On-Resistance: 2.5 mΩ (max)
• Continuous Drain Current: 10A
• Fast Switching Speeds
• SC-70 Small Outline Package

Designed for applications requiring efficient switching of continuous currents up to 10A.

Its low on-resistance enables high current conduction with minimal losses.

Fast switching improves conversion efficiency at high frequencies.

The compact SC-70 package provides a standard small footprint.

Well-suited for LED drivers, power supplies, battery chargers below 10A loads.

Also suitable for computing/telecom power supplies and general purpose switching applications.

In summary, the NCV3011DTBR2G offers a 10A MOSFET in a small package saving board space, ideal for space-constrained designs.