NCV3064DR2G onsemi

Here is the English information on the NCV3064DR2G chip:

The NCV3064DR2G is an N-channel power MOSFET from ON Semiconductor.

Key Specifications:

• Breakdown Voltage: 30V
• On-Resistance: 2.0 Ω (max)
• Continuous Drain Current: 4A
• Fast Switching Speeds
• SC-70 Small Outline Package

Designed for applications requiring efficient switching of continuous currents up to 4A.

Its low on-resistance enables high current conduction with minimal losses.

Fast switching improves conversion efficiency at high frequencies.

The compact SC-70 package provides a small footprint suitable for dense board layouts.

Well-suited for DC/DC converters, LED drivers, battery chargers below 4A loads.

Also suitable for computing/telecom power supplies and general purpose switching applications.

In summary, the NCV3064DR2G offers a 4A MOSFET in a small package, ideal for space-constrained circuit designs.