NCP114ASN180T1G onsemi

Here is the English information on the NCP114ASN180T1G chip:

• Breakdown Voltage: 18V
• On-Resistance: 0.18 Ω (typ)
• Continuous Drain Current: 10A
• Fast Switching Speeds
• PowerPAK SO-8 Package

The NCP114ASN180T1G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching of currents up to 10A
• Low on-resistance enables high conductivity with minimal losses
• Fast switching improves efficiency at high frequencies
• PowerPAK SO-8 package provides strong thermal dissipation for up to 10A loads

Common Applications:

• DC/DC converters, motor drivers below 10A load
• Battery chargers/power supplies for consumer appliances
• Industrial automation and control systems

Benefits include high current switching capability in a thermally robust package. It is well-suited for applications requiring up to 10A continuous current switching.