NCP3063BDR2G onsemi

Here is the English information on the NCP3063BDR2G chip:

• Breakdown Voltage: 30V
• On-Resistance: 2.0 Ω (max)
• Continuous Drain Current: 3A
• Fast Switching Speeds
• SOT-223 (SC-70) Small Outline Transistor Package

The NCP3063BDR2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching of currents up to 3A
• Low on-resistance enables high conduction with minimal losses
• Fast switching improves conversion efficiency at high frequencies
• Compact SOT-223 package saves space for board-level designs

Common Applications:

• DC/DC converters, voltage regulators
• Battery chargers/protection below 3A loads
• Low power switching circuits

Benefits include the ability to efficiently switch up to 3A in a small, surface mount package well-suited for space-constrained power designs. Its attributes make it suitable for various power supply and management applications under 3A loads.

In summary, the NCP3063BDR2G provides versatile 3A switching capabilities in a compact footprint.