NCP4307AASNT1G onsemi

Here is the English description of the NCP4307AASNT1G chip:

• Breakdown Voltage: 30V
• On-Resistance: 1.0 mΩ (typ)
• Continuous Drain Current: 4.3A
• Fast Switching Speeds
• SOT-23 (DBV) Package

The NCP4307AASNT1G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching of currents up to 4.3A
• Low on-resistance enables high conduction with minimal losses
• Fast switching improves efficiency at high frequencies
• Ultra-small SOT-23 package saves board space

Common Applications:

• Point-of-load DC/DC converters below 4.3A loads
• Battery chargers and protection circuits for loads under 4.3A
• Mobile/portable electronic power supplies

Benefits include the ability to precisely switch up to 4.3A in an extremely compact package suitable for space-constrained designs.

Well-suited for applications where a small switching footprint is required.

In summary, the NCP4307AASNT1G combines 4.3A switching performance with a minimized thermal and packaging profile.