NCP187AMTW080TAG onsemi

Here is the English description of the NCP187AMTW080TAG chip:

• Breakdown Voltage: 30V
• On-Resistance: N/A (typ)
• Continuous Drain Current: 1.8A
• Fast Switching Speeds
• SOT-23 (DBV) Package

The NCP187AMTW080TAG is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching of currents up to 1.8A
• Low RDS(on) enables high conduction with minimal losses
• Fast switching improves efficiency at high frequencies
• Ultra-small SOT-23 (DBV) package saves precious board space

Common Applications:

• Point-of-load DC/DC converters below 1.8A loads
• Battery chargers and protection circuits under 1.8A load
• Space-constrained motor control and power systems

Benefits include the ability to precisely switch up to 1.8A in a minimized footprint.

Well-suited for designs where current handling and small size are both important.

In summary, the NCP187AMTW080TAG combines 1.8A switching with an extremely compact packaging solution.