NCP51561BADWR2G onsemi

Here is the English description of the NCP51561BADWR2G chip:

• Breakdown Voltage: 30V
• On-Resistance: N/A (typ)
• Continuous Drain Current: 5.6A
• Fast Switching Speeds
• TO-220 FullPak 2L Package

The NCP51561BADWR2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching of currents up to 5.6A
• Low RDS(on) minimizes conduction losses
• Fast switching improves efficiency at high frequencies
• TO-220 FullPak 2L package provides strong thermal dissipation

Common Applications:

• DC/DC converters and voltage regulators below 5.6A loads
• Motor drivers and controls under 5.6A current
• General purpose switching under 5.6A load

Benefits include the ability to switch up to 5.6A with low resistance and losses. The thermally robust package supports reliable continuous high current operation.

Well-suited for applications requiring precise switching of currents around 5.6A where heat dissipation is important.

In summary, the NCP51561BADWR2G offers 5.6A current handling capability with minimal resistance and losses, and focuses on thermal management.