NCP51100ASNT1G onsemi

Here is the English description of the NCP51100ASNT1G chip:

• Breakdown Voltage: 30V
• On-Resistance: N/A (typ)
• Continuous Drain Current: 1A
• Fast Switching Speeds
• SOT-23 (DBV) Package

The NCP51100ASNT1G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching of currents up to 1A
• Low RDS(on) enables high conduction with minimal losses
• Fast switching improves efficiency at high frequencies
• Ultra-small SOT-23 package saves precious board space

Common Applications:

• Point-of-load DC/DC converters below 1A loads
• Battery chargers under 1A current
• Space constrained power supplies

Benefits include the ability to precisely switch up to 1A in a minimized footprint.

Well-suited for compact designs where board space is limited.

In summary, the NCP51100ASNT1G combines 1A switching capability with an extremely small package size. The focus is on minimized solutions.