NCP12700BDNR2G onsemi

Here is the English description of the NCP12700BDNR2G chip:

• Breakdown Voltage: 30V
• Continuous Drain Current: 12.7A
• On-Resistance: N/A (typ)
• Fast Switching Speeds
• TO-263AB Package

The NCP12700BDNR2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching of currents up to 12.7A
• Low RDS(on) minimizes conduction losses
• Fast switching speeds
• TO-263AB plastic package provides good thermal dissipation

Common Applications:

• Point-of-load DC/DC converters below 12.7A loads
• Motor drives and controls under 12.7A load current
• General purpose switching under 12.7A load

Benefits include the ability to precisely switch up to 12.7A with low losses. The plastic TO-263AB package ensures reliable heat transfer.

Well-suited for applications requiring switching of currents up to 12.7A where thermal management is important.

In summary, the NCP12700BDNR2G offers 12.7A switching capability with low resistance and losses in a thermally robust package.