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Home > products > ICs Integrated Circuit > NCV57000DWR2G onsemi

NCV57000DWR2G onsemi

manufacturer:
onsemi
Description:
NCV57000DWR2G onsemi SOIC-16
Category:
ICs Integrated Circuit
Specifications
Introduction

Here is the English description of the NCV57000DWR2G chip:

  • Breakdown Voltage: 30V
  • Continuous Drain Current: 5.7A
  • On-Resistance: N/A (typ)
  • Fast Switching Speeds
  • SOT-223 Package

The NCV57000DWR2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

  • Designed for efficient switching of currents up to 5.7A
  • Low RDS(on) minimizes conduction losses
  • Fast switching speeds
  • SOT-223 plastic package for reliable operation

Common Applications:

  • Point-of-load DC/DC converters below 5.7A loads
  • Motor driver and control circuits under 5.7A current
  • General purpose switching under 5.7A load

Benefits include the ability to precisely switch up to 5.7A with low losses. The SOT-223 package provides mechanical ruggedness.

Well-suited for applications requiring switching of currents up to 5.7A where reliable operation is important.

In summary, the NCV57000DWR2G delivers 5.7A switching capability with low resistance and losses in a rugged SOT-223 package.

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