NCP1380DDR2G onsemi

Here is the English description of the NCP1380DDR2G chip:

• Breakdown Voltage: 30V
• Continuous Drain Current: 13.8A
• On-Resistance: N/A (typ)
• Fast Switching Speeds
• TO-263 Package

The NCP1380DDR2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching of currents up to 13.8A
• Low RDS(on) minimizes conduction losses
• Fast switching speeds
• TO-263 plastic package provides good thermal dissipation

Common Applications:

• Point-of-load DC/DC converters below 13.8A loads
• Motor drivers and controls under 13.8A load current
• General purpose switching under 13.8A load

Benefits include the ability to precisely switch up to 13.8A with low losses. The plastic TO-263 package ensures reliable heat transfer.

Well-suited for applications requiring switching of currents up to 13.8A where thermal management is important.

In summary, the NCP1380DDR2G offers 13.8A switching capability with low resistance and losses in a thermally robust package.