NCP730ASN330T1G onsemi

Here is the English description of the NCP730ASN330T1G chip:

• Breakdown Voltage: 30V
• Continuous Drain Current: 7.3A
• On-Resistance: 30 mΩ (typ)
• Fast Switching Speeds
• Power SO-8 Package

The NCP730ASN330T1G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching of currents up to 7.3A
• Low RDS(on) of 30 mΩ minimizes conduction losses
• Fast switching speeds for high efficiency
• Power SO-8 package provides good thermal dissipation

Common Applications:

• Point-of-load DC/DC converters below 7.3A loads
• Motor driver and control circuits under 7.3A current
• General purpose switching under 7.3A loads

Benefits include reliability to switch up to 7.3A with industry-leading low resistance and losses.

Well-suited for applications requiring switching of currents up to 7.3A where minimizing conduction losses is important.

In summary, the NCP730ASN330T1G delivers 7.3A switching performance with ultra-low resistance in a thermally robust package.