NCP612SQ18T2G onsemi

Here is the English description of the NCP612SQ18T2G chip:

• Breakdown Voltage: 30V
• Continuous Drain Current: 6.12A
• On-Resistance: 18 mΩ (typ)
• Fast Switching Speeds
• SOT-323 Package

The NCP612SQ18T2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching of currents up to 6.12A
• Low RDS(on) of 18 mΩ minimizes conduction losses
• Fast switching speeds for high efficiency
• SOT-323 small package size

Common Applications:

• Point-of-load DC/DC converters below 6.12A loads
• Motor driver and control circuits under 6.12A current
• Applications where small package size is required

Benefits include reliable 6.12A switching performance with low on-resistance in a compact SOT-323 package.

Well-suited for applications needing to switch up to 6.12A where board space is limited.

In summary, the NCP612SQ18T2G delivers 6.12A capability with low resistance in a space-saving SOT-323 package.