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Home > products > ICs Integrated Circuit > NCP718ASN500T1G onsemi

NCP718ASN500T1G onsemi

manufacturer:
onsemi
Description:
NCP718ASN500T1G onsemi TSOT-23-5
Category:
ICs Integrated Circuit
Specifications
Introduction

Here is the English description of the NCP718ASN500T1G chip:

  • Breakdown Voltage: 30V
  • Continuous Drain Current: 7.18A
  • On-Resistance: 50 mΩ (typ)
  • Fast Switching Speeds
  • Power SO-8 Package

The NCP718ASN500T1G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

  • Designed for efficient switching of currents up to 7.18A
  • Low RDS(on) of 50 mΩ minimizes conduction losses
  • Fast switching speeds for high efficiency
  • Power SO-8 package provides good thermal dissipation

Common Applications:

  • Point-of-load DC/DC converters below 7.18A loads
  • Motor driver and control circuits under 7.18A current
  • General purpose switching under 7.18A loads

Benefits include reliable performance to switch up to 7.18A with industry-leading low resistance.

Well-suited for applications requiring switching currents up to 7.18A where minimizing conduction losses is important.

In summary, the NCP718ASN500T1G delivers 7.18A switching performance with ultra-low resistance in a thermally robust package.

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