FSB50250AS onsemi / Fairchild

Here is the English description of the FSB50250AS chip:

• Type: N-channel Power MOSFET
• Maximum Drain Current: 50A
• On Resistance: 2.8 mΩ (typ)
• Breakdown Voltage: 25V
• Package: TO-247-3

The FSB50250AS is an N-channel power MOSFET from Infineon.

Key Features:

• Designed for very high current switching of up to 50A
• Ultra-low on resistance of 2.8 mΩ for minimal conduction losses
• 25V breakdown voltage rating
• TO-247-3 package provides excellent thermal dissipation

Common Applications:

• High current motor drives, industrial controls above 30A
• Power supplies requiring transistor switching above 50A
• Applications where extremely low RDS(on) is critical

Benefits include industry-leading 50A current handling and very low on resistance. The TO-247-3 package ensures strong thermal performance.

Well-suited for precise switching of currents up to 50A where minimizing conduction losses is essential.

In summary, the FSB50250AS provides best-in-class 50A switching capability with ultra-low resistance in a robust, heat-conducting TO-247-3 package.