NCP1251CSN65T1G onsemi

Here is the English description of the NCP1251CSN65T1G chip:

• Breakdown Voltage: 30V
• Continuous Drain Current: 12.51A
• On-Resistance: 65 mΩ (typ)
• Fast Switching Speeds
• PowerSO8 Package

The NCP1251CSN65T1G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching of currents up to 12.51A
• Low RDS(on) of 65 mΩ minimizes conduction losses
• Fast switching improves efficiency at high frequencies
• PowerSO8 package provides good thermal dissipation

Common Applications:

• Point-of-load DC/DC converters below 12.51A loads
• Motor drivers requiring up to 12.51A continuous operation
• Applications where reliable heat transfer is important

Benefits include industry-leading 12.51A switching capability with low resistance. The PowerSO8 package ensures strong thermal performance.

Well-suited for applications needing to precisely switch currents up to 12.51A where minimizing conduction losses is critical.

In summary, the NCP1251CSN65T1G offers 12.51A switching with ultra-low on-resistance and optimized thermals in a PowerSO8 package.