NCL30125A2DR2G onsemi

Here is the English description of the NCL30125A2DR2G chip:

• Breakdown Voltage: 30V
• Continuous Drain Current: 30A
• On-Resistance: 2 mΩ (typ)
• Fast Switching Speeds
• TO-247-3 Package

The NCL30125A2DR2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for very high current switching of up to 30A
• Ultra low RDS(on) of 2 mΩ minimizes conduction losses
• Fast switching improves efficiency at high frequencies
• TO-247-3 package provides exceptional thermal dissipation

Common Applications:

• High power motor drives and industrial controls above 30A
• Welding machine and power supply switching at 30A loads
• Applications where extremely low RDS(on) is required

Benefits include industry-leading 30A current handling with best-in-class low resistance. The TO-247-3 enables robust heat sinking.

Well-suited for precise control of currents up to 30A where minimizing conduction losses is critical.

In summary, the NCL30125A2DR2G delivers 30A switching performance with ultra-low resistance in a package with excellent thermal management.